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DMG1016V
P-CHANNEL – Q 2
1.0
V GS = -8.0      V
1.0
0.8
V GS = -4.5V
V GS = -3.0V
0.8
V DS = -5V
0.6
0.4
V GS = -2.5V
V GS = -2.0V
0.6
0.4
0.2
V GS = -1.5V
0.2
T A = 150°C
T A = 125°C
T A = 85°C
T A = 25°C
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
5
0
0
T A = -55°C
0.5 1.0 1.5 2.0 2.5
3.0
1.6
1.4
1.2
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Output Characteristic
V GS = -1.8V
1.0
0.8
-V GS , GATE-SOURCE VOLTAGE (V)
Fig. 13 Typical Transfer Characteristic
V GS = -4.5      V
T A = 150°C
1.0
0.8
0.6
T A = 125°C
T A = 85°C
T A = 25°C
0.6
0.4
V GS = -2.5V
V GS = -4.5V
0.4
T A = -55°C
0.2
0.2
0
0
0.2 0.4 0.6 0.8
1.0
0
0
0.2
0.4 0.6 0.8
1.0
1.7
1.5
1.3
-I D , DRAIN-SOURCE CURRENT (A)
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.0
0.8
-I D , DRAIN CURRENT (A)
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
V GS = -2.5V
I D = -250mA
0.6
1.1
0.9
0.7
0.5
V GS = -4.5V
I D = -500mA
V GS = -2.5V
I D = -250mA
0.4
0.2
0
V GS = -4.5V
I D = -500mA
-50
-25 0 25 50 75 100 125 150
-50
-25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Fig. 16 On-Resistance Variation with Temperature
T A , AMBIENT TEMPERATURE (°C)
Fig. 17 On-Resistance Variation with Temperature
DMG1016V
Document number: DS31767 Rev. 3 - 2
5 of 8
www.diodes.com
May 2009
? Diodes Incorporated
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